Semiconductors
MMDT3904DW CBI Inventory and RFQ Quote
40V 200mW 100@10mA,1V 200mA NPN SOT-363 Bipolar (BJT) ROHS MMDT3904DW CBI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MMDT3904DW
- Brand
- CBI
- Qty
- 546000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 200mW 100@10mA,1V 200mA NPN SOT-363 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 50nA
- Collector-Emitter Breakdown Voltage (Vceo): 40V
- Power Dissipation (Pd): 200mW
- DC Current Gain (hFE@Ic: 100@10mA
- Collector Current (Ic): 200mA
- Transition Frequency (fT): 300MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 300mV@50mA
- Transistor Type: NPN
- Operating Temperature: -