Transistor
BC857DW CBI Inventory and RFQ Quote
45V 300mW 125@2mA,5V 200mA PNP SOT-363 Bipolar (BJT) ROHS BC857DW CBI Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BC857DW
- Brand
- CBI
- Qty
- 546000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
45V 300mW 125@2mA,5V 200mA PNP SOT-363 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 15nA
- Collector-Emitter Breakdown Voltage (Vceo): 45V
- Power Dissipation (Pd): 300mW
- DC Current Gain (hFE@Ic: 125@2mA
- Collector Current (Ic): 200mA
- Transition Frequency (fT): 200MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 650mV@100mA
- Transistor Type: PNP
- Operating Temperature: -