Transistor
MMBT5401T CBI Inventory and RFQ Quote
150V 200mW 60@10mA,5V 600mA PNP SOT-523-3 Bipolar (BJT) ROHS MMBT5401T CBI Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MMBT5401T
- Brand
- CBI
- Qty
- 548000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
150V 200mW 60@10mA,5V 600mA PNP SOT-523-3 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 50nA
- Collector-Emitter Breakdown Voltage (Vceo): 150V
- Power Dissipation (Pd): 200mW
- DC Current Gain (hFE@Ic: 60@10mA
- Collector Current (Ic): 600mA
- Transition Frequency (fT): 100MHz
- Transistor Type: PNP
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 200mV@10mA
- Operating Temperature: -