Semiconductors
MMDT3052DW CBI Inventory and RFQ Quote
50V 150mW 200mA NPN SOT-363 Bipolar (BJT) ROHS MMDT3052DW CBI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MMDT3052DW
- Brand
- CBI
- Qty
- 546000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
50V 150mW 200mA NPN SOT-363 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Power Dissipation (Pd): 150mW
- Collector Current (Ic): 200mA
- Transition Frequency (fT): 200MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 300mV@100mA
- Transistor Type: NPN
- Operating Temperature: -