Power
IRF641 Harris Corporation Inventory and RFQ Quote
150V 18A 180mΩ@10A,10V 125W 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS IRF641 Harris Corporation TO-220 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IRF641
- Brand
- Harris Corporation
- Qty
- 509000
- Package
- TO-220
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
150V 18A 180mΩ@10A,10V 125W 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 18A
- Drain Source On Resistance (RDS(on)@Vgs: 180mΩ@10A
- Power Dissipation (Pd): 125W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.275nF@25V
- Total Gate Charge (Qg@Vgs): 64nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)