Semiconductors
HGTG40N60C3 Harris Corporation Inventory and RFQ Quote
291W 75A 600V TO-247 IGBT Transistors / Modules ROHS HGTG40N60C3 Harris Corporation TO-3P Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HGTG40N60C3
- Brand
- Harris Corporation
- Qty
- 510000
- Package
- TO-3P
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
291W 75A 600V TO-247 IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Turn?off Delay Time (Td(off)): 185ns
- Power Dissipation (Pd): 291W
- Turn?on Delay Time (Td(on)): 47ns
- Operating Temperature: -55℃~+150℃@(Tj)
- Collector Current (Ic): 75A
- Collector-Emitter Breakdown Voltage (Vces): 600V
- Input Capacitance (Cies@Vce): -
- Type: -
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.8V@15V
- Total Gate Charge (Qg@Ic: 395nC