Semiconductors
IPW60R160P6 Infineon Technologies Inventory and RFQ Quote
MOSFET HIGH POWER_LEGACY IPW60R160P6 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPW60R160P6
- Brand
- Infineon Technologies
- Qty
- 509000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET HIGH POWER_LEGACY
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: TO-247-3
- Vgs th - Gate-Source Threshold Voltage: 3.5 V
- Width: 5.21 mm
- Qg - Gate Charge: 44 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPW60R160P6FKSA1 SP001017092
- Fall Time: 5.8 ns
- Mounting Style: Through Hole