Semiconductors
IPP600N25N3G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3 IPP600N25N3G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPP600N25N3G
- Brand
- Infineon Technologies
- Qty
- 509000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 250 V
- Transistor Polarity: N-Channel
- Package / Case: PG-TO-220-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 4.4 mm
- Qg - Gate Charge: 22 nC
- Vgs - Gate-Source Voltage: 10 V
- Part # Aliases: IPP600N25N3GXKSA1 IPP6N25N3GXK SP000677832
- Type: OptiMOS 3 Power-Transistor
- Fall Time: 8 ns