Semiconductors
HY1906C2 HUAYI Inventory and RFQ Quote
60V 70A 5.7mΩ@10V,20A 57.7W 3V@250uA 1PCSNChannel DFN-8(5.8x5.9) MOSFETs ROHS HY1906C2 HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HY1906C2
- Brand
- HUAYI
- Qty
- 539000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 70A 5.7mΩ@10V,20A 57.7W 3V@250uA 1PCSNChannel DFN-8(5.8x5.9) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 70A
- Drain Source On Resistance (RDS(on)@Vgs: 5.7mΩ@10V
- Power Dissipation (Pd): 57.7W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 360pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 4.62nF@25V
- Total Gate Charge (Qg@Vgs): 102nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)