Semiconductors
HYG080ND03LA1S HUAYI Inventory and RFQ Quote
30V 11A 2.5W 9.5mΩ@10V,10A 1.6V@250uA 2 N-Channel SOP-8 MOSFETs ROHS HYG080ND03LA1S HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG080ND03LA1S
- Brand
- HUAYI
- Qty
- 541000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
30V 11A 2.5W 9.5mΩ@10V,10A 1.6V@250uA 2 N-Channel SOP-8 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 11A
- Power Dissipation (Pd): 2.5W
- Drain Source On Resistance (RDS(on)@Vgs: 9.5mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 70pF@15V
- Type: 2 N
- Input Capacitance (Ciss@Vds): 680pF@15V
- Total Gate Charge (Qg@Vgs): 16.1nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)