Semiconductors
HYG060P04LQ1D HUAYI Inventory and RFQ Quote
40V 70A 2.8mΩ@10V,20A 65W 1.6V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS HYG060P04LQ1D HUAYI TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG060P04LQ1D
- Brand
- HUAYI
- Qty
- 542000
- Package
- TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 70A 2.8mΩ@10V,20A 65W 1.6V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 70A
- Drain Source On Resistance (RDS(on)@Vgs: 2.8mΩ@10V
- Power Dissipation (Pd): 65W
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 403pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 6.774nF@25V
- Total Gate Charge (Qg@Vgs): 63nC@4.5V
- Operating Temperature: -55℃~+175℃@(Tj)