Semiconductors
HSBA50N06 HUASHUO Inventory and RFQ Quote
60V 50A 62W 12mΩ@10V,30A 2.5V@250uA 1PCSNChannel PRPAK5x6 MOSFETs ROHS HSBA50N06 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSBA50N06
- Brand
- HUASHUO
- Qty
- 542000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 50A 62W 12mΩ@10V,30A 2.5V@250uA 1PCSNChannel PRPAK5x6 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 50A
- Power Dissipation (Pd): 62W
- Drain Source On Resistance (RDS(on)@Vgs: 12mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 106pF@4.5V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.84nF@15V
- Total Gate Charge (Qg@Vgs): 23nC@4.5V
- Operating Temperature: -55℃~+150℃@(Tj)