Transistor
HSSK2N7002 HUASHUO Inventory and RFQ Quote
60V 300mA 350mW 2.3Ω@10V,0.3A 2.5V@250uA 1PCSNChannel SOT-363 MOSFETs ROHS HSSK2N7002 HUASHUO Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSSK2N7002
- Brand
- HUASHUO
- Qty
- 541000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
60V 300mA 350mW 2.3Ω@10V,0.3A 2.5V@250uA 1PCSNChannel SOT-363 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 300mA
- Power Dissipation (Pd): 350mW
- Drain Source On Resistance (RDS(on)@Vgs: 2.3Ω@10V
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 4.2pF@30V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 18.5pF@30V
- Total Gate Charge (Qg@Vgs): 500pC@10V
- Operating Temperature: -55℃~+150℃@(Tj)