Transistor
HYG092N10LS1C2 HUAYI Inventory and RFQ Quote
100V 60A 7.8mΩ@10V,20A 62.5W 1.6V@250uA 1PCSNChannel PDFN-8(5.9x5.2) MOSFETs ROHS HYG092N10LS1C2 HUAYI PDFN5X6 Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG092N10LS1C2
- Brand
- HUAYI
- Qty
- 541000
- Package
- PDFN5X6
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
100V 60A 7.8mΩ@10V,20A 62.5W 1.6V@250uA 1PCSNChannel PDFN-8(5.9x5.2) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 60A
- Drain Source On Resistance (RDS(on)@Vgs: 7.8mΩ@10V
- Power Dissipation (Pd): 62.5W
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 12.4pF@50V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.348nF@50V
- Total Gate Charge (Qg@Vgs): 25nC@10V
- Operating Temperature: -