Semiconductors
HSK4N10 HUASHUO Inventory and RFQ Quote
100V 4A 165mΩ@10V,4A 1.25W 2.5V@250uA 1 N-Channel SOT-89-3 MOSFETs ROHS HSK4N10 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSK4N10
- Brand
- HUASHUO
- Qty
- 508000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 4A 165mΩ@10V,4A 1.25W 2.5V@250uA 1 N-Channel SOT-89-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 4A
- Drain Source On Resistance (RDS(on)@Vgs: 165mΩ@10V
- Power Dissipation (Pd): 1.25W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1 N