Semiconductors
HSBA90N12 HUASHUO Inventory and RFQ Quote
120V 90A 125W 6.5mΩ@10V,20A 2.2V@250uA 1PCSNChannel PRPAK5x6 MOSFETs ROHS HSBA90N12 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSBA90N12
- Brand
- HUASHUO
- Qty
- 509000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
120V 90A 125W 6.5mΩ@10V,20A 2.2V@250uA 1PCSNChannel PRPAK5x6 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 120V
- Continuous Drain Current (Id): 90A
- Power Dissipation (Pd): 125W
- Drain Source On Resistance (RDS(on)@Vgs: 6.5mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 17pF@60V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 3.82nF@60V
- Total Gate Charge (Qg@Vgs): 39nC@4.5V
- Operating Temperature: -55℃~+150℃@(Tj)