Semiconductors
HN1A01FE-GR,LF Toshiba Semiconductor and Storage Inventory and RFQ Quote
Bipolar Transistors - BJT Bias Resistor Built-in transistor HN1A01FE-GR,LF Toshiba Semiconductor and Storage Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HN1A01FE-GR,LF
- Brand
- Toshiba Semiconductor and Storage
- Qty
- 508000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
Bipolar Transistors - BJT Bias Resistor Built-in transistor
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > Bipolar Transistors - BJT
- Reference Source
- Mouser
Key Specifications
- Emitter- Base Voltage VEBO: - 5 V
- Collector-Emitter Saturation Voltage: - 0.3 V
- Product Category: Bipolar Transistors - BJT
- Transistor Polarity: PNP
- Subcategory: Transistors
- Product Type: BJTs - Bipolar Transistors
- Series: HN1A01
- Brand: Toshiba
- Maximum DC Collector Current: - 150 mA
- DC Current Gain hFE Max: 400