Semiconductors
HSCB2016 HUASHUO Inventory and RFQ Quote
20V 16A 9mΩ@4.5V,16A 18W 700mV@250uA 1PCSNChannel DFN-6L(2x2) MOSFETs ROHS HSCB2016 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSCB2016
- Brand
- HUASHUO
- Qty
- 509000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
20V 16A 9mΩ@4.5V,16A 18W 700mV@250uA 1PCSNChannel DFN-6L(2x2) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 16A
- Drain Source On Resistance (RDS(on)@Vgs: 9mΩ@4.5V
- Power Dissipation (Pd): 18W
- Gate Threshold Voltage (Vgs(th)@Id): 700mV@250uA
- Reverse Transfer Capacitance (Crss@Vds): 100pF@10V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 910pF@10V
- Total Gate Charge (Qg@Vgs): 12nC@4.5V
- Operating Temperature: -55℃~+150℃@(Tj)