Semiconductors
HSH100P06 HUASHUO Inventory and RFQ Quote
60V 100A 5.5mΩ@10V,20A 210W 3V@250uA 1PCSPChannel TO-263 MOSFETs ROHS HSH100P06 HUASHUO TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSH100P06
- Brand
- HUASHUO
- Qty
- 595000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 100A 5.5mΩ@10V,20A 210W 3V@250uA 1PCSPChannel TO-263 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 100A
- Drain Source On Resistance (RDS(on)@Vgs: 5.5mΩ@10V
- Power Dissipation (Pd): 210W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 50pF@30V
- Type: 1 P
- Input Capacitance (Ciss@Vds): 5.2nF@30V
- Total Gate Charge (Qg@Vgs): 85nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)