Transistor
HSW2N15 HUASHUO Inventory and RFQ Quote
150V 1.4A 480mΩ@10V,1A 1.56W 4V@250uA 1PCSNChannel SOT-23-6 MOSFETs ROHS HSW2N15 HUASHUO Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSW2N15
- Brand
- HUASHUO
- Qty
- 596000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
150V 1.4A 480mΩ@10V,1A 1.56W 4V@250uA 1PCSNChannel SOT-23-6 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 1.4A
- Drain Source On Resistance (RDS(on)@Vgs: 480mΩ@10V
- Power Dissipation (Pd): 1.56W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 25pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 350pF@25V
- Total Gate Charge (Qg@Vgs): 8.3nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)