Semiconductors
HSBB0210 HUASHUO Inventory and RFQ Quote
100V 2.8A 100mΩ@10V,2A 12.5W 2.3V@250uA 2 N-Channel PRPAK(3x3) MOSFETs ROHS HSBB0210 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSBB0210
- Brand
- HUASHUO
- Qty
- 596000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 2.8A 100mΩ@10V,2A 12.5W 2.3V@250uA 2 N-Channel PRPAK(3x3) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 2.8A
- Drain Source On Resistance (RDS(on)@Vgs: 100mΩ@10V
- Power Dissipation (Pd): 12.5W
- Gate Threshold Voltage (Vgs(th)@Id): 2.3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 2.5pF@50V
- Type: 2 N
- Input Capacitance (Ciss@Vds): 180pF@50V
- Total Gate Charge (Qg@Vgs): 3.5nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)