Semiconductors
GB35XF120K Vishay General Semiconductor - Diodes Division Inventory and RFQ Quote
IGBT MODULE 1200V 50A 284W GB35XF120K Vishay General Semiconductor - Diodes Division E108X45-17L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- GB35XF120K
- Brand
- Vishay General Semiconductor - Diodes Division
- Qty
- 596000
- Package
- E108X45-17L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
IGBT MODULE 1200V 50A 284W
- Source Category
- ["Discrete Semiconductor Products", "Transistors - IGBTs - Modules"]
- Reference Source
- DigiKey
Key Specifications
- Mfr: Vishay General Semiconductor - Diodes Division
- Series: -
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 284 W
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
- Current - Collector Cutoff (Max): 100 µA