Semiconductors
HSH250N10 HUASHUO Inventory and RFQ Quote
100V 250A 1.9mΩ@10V,40A 411W 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS HSH250N10 HUASHUO TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSH250N10
- Brand
- HUASHUO
- Qty
- 596000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 250A 1.9mΩ@10V,40A 411W 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 250A
- Drain Source On Resistance (RDS(on)@Vgs: 1.9mΩ@10V
- Power Dissipation (Pd): 411W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 55pF@50V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 10.15nF@50V
- Total Gate Charge (Qg@Vgs): 195nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)