Power
IRFP251 Harris Corporation Inventory and RFQ Quote
150V 33A 85mΩ@17A,10V 180W 4V@250uA 1 N-Channel TO-247 MOSFETs ROHS IRFP251 Harris Corporation TO-3 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IRFP251
- Brand
- Harris Corporation
- Qty
- 509000
- Package
- TO-3
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
150V 33A 85mΩ@17A,10V 180W 4V@250uA 1 N-Channel TO-247 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 33A
- Drain Source On Resistance (RDS(on)@Vgs: 85mΩ@17A
- Power Dissipation (Pd): 180W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2nF@25V
- Total Gate Charge (Qg@Vgs): 120nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)