Semiconductors
IPG20N10S4L-35 Infineon Technologies Inventory and RFQ Quote
MOSFET MOSFET IPG20N10S4L-35 Infineon Technologies TDSON-8 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPG20N10S4L-35
- Brand
- Infineon Technologies
- Qty
- 507000
- Package
- TDSON-8
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET MOSFET
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 35 mOhms
- Package / Case: PG-TDSON-8
- Vgs th - Gate-Source Threshold Voltage: 1.1 V
- Width: 5.15 mm
- Qg - Gate Charge: 13.4 nC
- Vgs - Gate-Source Voltage: 10 V
- Part # Aliases: IPG20N10S4L35ATMA1 IPG2N1S4L35XT SP000859022
- Fall Time: 13 ns