Semiconductors
IPD65R1K0CE Infineon Technologies Inventory and RFQ Quote
650V 7.2A 68W 1Ω@10V,1.5A 3.5V@200uA 1PCSNChannel TO-252-3 MOSFETs ROHS IPD65R1K0CE Infineon Technologies DPAK / TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD65R1K0CE
- Brand
- Infineon Technologies
- Qty
- 507000
- Package
- DPAK / TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
650V 7.2A 68W 1Ω@10V,1.5A 3.5V@200uA 1PCSNChannel TO-252-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 7.2A
- Power Dissipation (Pd): 68W
- Drain Source On Resistance (RDS(on)@Vgs: 1Ω@10V
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@200uA
- Type: 1 N