Semiconductors
IPD25CN10N G Infineon Technologies Inventory and RFQ Quote
100V 35A 25mΩ@10V,35A 71W 4V@39uA 1PCSNChannel TO-252-3 MOSFETs ROHS IPD25CN10N G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD25CN10N G
- Brand
- Infineon Technologies
- Qty
- 507000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 35A 25mΩ@10V,35A 71W 4V@39uA 1PCSNChannel TO-252-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 35A
- Drain Source On Resistance (RDS(on)@Vgs: 25mΩ@10V
- Power Dissipation (Pd): 71W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@39uA
- Type: 1 N