Semiconductors
HYG120P06LR1D HUAYI Inventory and RFQ Quote
60V 55A 12.5mΩ@10V,20A 75W 1.8V@250uA 1PCSPChannel TO-252 MOSFETs ROHS HYG120P06LR1D HUAYI TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG120P06LR1D
- Brand
- HUAYI
- Qty
- 550000
- Package
- TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 55A 12.5mΩ@10V,20A 75W 1.8V@250uA 1PCSPChannel TO-252 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 55A
- Drain Source On Resistance (RDS(on)@Vgs: 12.5mΩ@10V
- Power Dissipation (Pd): 75W
- Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 195pF@25V
- Type: 1 P
- Input Capacitance (Ciss@Vds): 4.882nF@25V
- Total Gate Charge (Qg@Vgs): 46.3nC@10V
- Operating Temperature: -