Semiconductors
HYG025N04LQ1D HUAYI Inventory and RFQ Quote
40V 150A 2.4mΩ@10V,40A 150W 1.7V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS HYG025N04LQ1D HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG025N04LQ1D
- Brand
- HUAYI
- Qty
- 550000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 150A 2.4mΩ@10V,40A 150W 1.7V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 150A
- Drain Source On Resistance (RDS(on)@Vgs: 2.4mΩ@10V
- Power Dissipation (Pd): 150W
- Gate Threshold Voltage (Vgs(th)@Id): 1.7V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 334pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 7.08nF@25V
- Total Gate Charge (Qg@Vgs): 151nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)