Semiconductors
HYG080N10LS1C2 HUAYI Inventory and RFQ Quote
100V 65A 6.9mΩ@10V,20A 71W 2V@250uA 1PCSNChannel TDFN-8(5.2x5.9) MOSFETs ROHS HYG080N10LS1C2 HUAYI PDFN5X6-8L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG080N10LS1C2
- Brand
- HUAYI
- Qty
- 552000
- Package
- PDFN5X6-8L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 65A 6.9mΩ@10V,20A 71W 2V@250uA 1PCSNChannel TDFN-8(5.2x5.9) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 65A
- Drain Source On Resistance (RDS(on)@Vgs: 6.9mΩ@10V
- Power Dissipation (Pd): 71W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 39pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.07nF@25V
- Total Gate Charge (Qg@Vgs): 30.2nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)