Semiconductors
HY1904C2 HUAYI Inventory and RFQ Quote
40V 65A 6mΩ@10V,20A 48W 3V@250uA 1PCSNChannel PPAK-8L(5x6) MOSFETs ROHS HY1904C2 HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HY1904C2
- Brand
- HUAYI
- Qty
- 552000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 65A 6mΩ@10V,20A 48W 3V@250uA 1PCSNChannel PPAK-8L(5x6) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 65A
- Drain Source On Resistance (RDS(on)@Vgs: 6mΩ@10V
- Power Dissipation (Pd): 48W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1 N