Semiconductors
HYG045N03LA1C1 HUAYI Inventory and RFQ Quote
30V 50A 23W 3.9mΩ@10V,20A 1.6V@250uA 1PCSNChannel PDFN-8(3.1x3.1) MOSFETs ROHS HYG045N03LA1C1 HUAYI PDFN3*3 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG045N03LA1C1
- Brand
- HUAYI
- Qty
- 553000
- Package
- PDFN3*3
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
30V 50A 23W 3.9mΩ@10V,20A 1.6V@250uA 1PCSNChannel PDFN-8(3.1x3.1) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 50A
- Power Dissipation (Pd): 23W
- Drain Source On Resistance (RDS(on)@Vgs: 3.9mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 228pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.106nF@25V
- Total Gate Charge (Qg@Vgs): 46.2nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)