Semiconductors
HYG090ND06LS1C2 HUAYI Inventory and RFQ Quote
60V 56A 60W 8mΩ@10V,20A 1.9V@250uA 2 N-Channel PDFN-8(5.2x5.9) MOSFETs ROHS HYG090ND06LS1C2 HUAYI DFN5X6 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG090ND06LS1C2
- Brand
- HUAYI
- Qty
- 504000
- Package
- DFN5X6
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 56A 60W 8mΩ@10V,20A 1.9V@250uA 2 N-Channel PDFN-8(5.2x5.9) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 56A
- Power Dissipation (Pd): 60W
- Drain Source On Resistance (RDS(on)@Vgs: 8mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 1.9V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 39pF@25V
- Type: 2 N
- Input Capacitance (Ciss@Vds): 926pF@25V
- Total Gate Charge (Qg@Vgs): 18.5nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)