Semiconductors
HY1607B HUAYI Inventory and RFQ Quote
68V 80A 7.8mΩ@10V,40A 115W 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS HY1607B HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HY1607B
- Brand
- HUAYI
- Qty
- 505000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
68V 80A 7.8mΩ@10V,40A 115W 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 68V
- Continuous Drain Current (Id): 80A
- Drain Source On Resistance (RDS(on)@Vgs: 7.8mΩ@10V
- Power Dissipation (Pd): 115W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N