Transistor
HYG022N10NS1TA HUAYI Inventory and RFQ Quote
100V 249A 312W 2.2mΩ@10V,50A 3.1V@250uA 1PCSNChannel TOLL MOSFETs ROHS HYG022N10NS1TA HUAYI TOLL-8L Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG022N10NS1TA
- Brand
- HUAYI
- Qty
- 506000
- Package
- TOLL-8L
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
100V 249A 312W 2.2mΩ@10V,50A 3.1V@250uA 1PCSNChannel TOLL MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 249A
- Power Dissipation (Pd): 312W
- Drain Source On Resistance (RDS(on)@Vgs: 2.2mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 3.1V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 186.6pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 9.026nF@25V
- Total Gate Charge (Qg@Vgs): 160.5nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)