Transistor
HYG032N03LR1C1 HUAYI Inventory and RFQ Quote
30V 55A 3.3mΩ@10V,20A 23W 1.8V@250uA 1PCSNChannel DFN-8(3x3) MOSFETs ROHS HYG032N03LR1C1 HUAYI Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG032N03LR1C1
- Brand
- HUAYI
- Qty
- 510000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
30V 55A 3.3mΩ@10V,20A 23W 1.8V@250uA 1PCSNChannel DFN-8(3x3) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 55A
- Drain Source On Resistance (RDS(on)@Vgs: 3.3mΩ@10V
- Power Dissipation (Pd): 23W
- Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 277pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.872nF@25V
- Total Gate Charge (Qg@Vgs): 32nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)