Semiconductors
HYG023N03LR1C2 HUAYI Inventory and RFQ Quote
30V 125A 1.5mΩ@10V,20A 62.5W 1.7V@250uA 1PCSNChannel DFN-8(5.2x5.9) MOSFETs ROHS HYG023N03LR1C2 HUAYI PDFN5*6-8L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG023N03LR1C2
- Brand
- HUAYI
- Qty
- 508000
- Package
- PDFN5*6-8L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
30V 125A 1.5mΩ@10V,20A 62.5W 1.7V@250uA 1PCSNChannel DFN-8(5.2x5.9) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 125A
- Drain Source On Resistance (RDS(on)@Vgs: 1.5mΩ@10V
- Power Dissipation (Pd): 62.5W
- Gate Threshold Voltage (Vgs(th)@Id): 1.7V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 462pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 4.71nF@25V
- Total Gate Charge (Qg@Vgs): 48nC@4.5V
- Operating Temperature: -55℃~+175℃@(Tj)