Semiconductors
HYG053N10NS1P HUAYI Inventory and RFQ Quote
TO-220FB MOSFETs ROHS HYG053N10NS1P HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG053N10NS1P
- Brand
- HUAYI
- Qty
- 505000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
TO-220FB MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): -
- Continuous Drain Current (Id): -
- Drain Source On Resistance (RDS(on)@Vgs: -
- Power Dissipation (Pd): -
- Gate Threshold Voltage (Vgs(th)@Id): -
- Reverse Transfer Capacitance (Crss@Vds): -
- Type: -
- Input Capacitance (Ciss@Vds): -
- Total Gate Charge (Qg@Vgs): -