Semiconductors
HYG045P06LA1B HUAYI Inventory and RFQ Quote
60V 160A 3.9mΩ@10V,50A 250W 1.3V@250uA 1PCSPChannel TO-263-2 MOSFETs ROHS HYG045P06LA1B HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG045P06LA1B
- Brand
- HUAYI
- Qty
- 529000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 160A 3.9mΩ@10V,50A 250W 1.3V@250uA 1PCSPChannel TO-263-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 160A
- Drain Source On Resistance (RDS(on)@Vgs: 3.9mΩ@10V
- Power Dissipation (Pd): 250W
- Gate Threshold Voltage (Vgs(th)@Id): 1.3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 444pF@30V
- Type: 1 P
- Input Capacitance (Ciss@Vds): 16.993nF@30V
- Total Gate Charge (Qg@Vgs): 152nC@10V
- Operating Temperature: -