Semiconductors
HYG025N04NA1D HUAYI Inventory and RFQ Quote
40V 125A 2.5mΩ@10V,40A 93W 2.7V@2.5mA 1PCSNChannel TO-252 MOSFETs ROHS HYG025N04NA1D HUAYI TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG025N04NA1D
- Brand
- HUAYI
- Qty
- 531000
- Package
- TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 125A 2.5mΩ@10V,40A 93W 2.7V@2.5mA 1PCSNChannel TO-252 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 125A
- Drain Source On Resistance (RDS(on)@Vgs: 2.5mΩ@10V
- Power Dissipation (Pd): 93W
- Gate Threshold Voltage (Vgs(th)@Id): 2.7V@2.5mA
- Reverse Transfer Capacitance (Crss@Vds): 569pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 5.625nF@25V
- Total Gate Charge (Qg@Vgs): 122.6nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)