Semiconductors
HYG045N03LA1D HUAYI Inventory and RFQ Quote
30V 80A 3.8mΩ@10V,20A 57W 1.4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS HYG045N03LA1D HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG045N03LA1D
- Brand
- HUAYI
- Qty
- 532000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
30V 80A 3.8mΩ@10V,20A 57W 1.4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 80A
- Drain Source On Resistance (RDS(on)@Vgs: 3.8mΩ@10V
- Power Dissipation (Pd): 57W
- Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 221pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.156nF@25V
- Total Gate Charge (Qg@Vgs): 26nC@4.5V
- Operating Temperature: -55℃~+175℃@(Tj)