Semiconductors
HY4903B6 HUAYI Inventory and RFQ Quote
30V 314A 1.7mΩ@10V,150A 268W 3V@250uA 1PCSNChannel TO-263-6 MOSFETs ROHS HY4903B6 HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HY4903B6
- Brand
- HUAYI
- Qty
- 536000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
30V 314A 1.7mΩ@10V,150A 268W 3V@250uA 1PCSNChannel TO-263-6 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 314A
- Drain Source On Resistance (RDS(on)@Vgs: 1.7mΩ@10V
- Power Dissipation (Pd): 268W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1 N