Semiconductors
HY3215W HUAYI Inventory and RFQ Quote
150V 130A 11.5mΩ@10V,40A 349W 4V@250uA 1PCSNChannel TO-247A-3L MOSFETs ROHS HY3215W HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HY3215W
- Brand
- HUAYI
- Qty
- 530000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
150V 130A 11.5mΩ@10V,40A 349W 4V@250uA 1PCSNChannel TO-247A-3L MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 130A
- Drain Source On Resistance (RDS(on)@Vgs: 11.5mΩ@10V
- Power Dissipation (Pd): 349W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 194pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 5.925nF@25V
- Total Gate Charge (Qg@Vgs): 135nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)