Semiconductors
HYG028N10NS1B HUAYI Inventory and RFQ Quote
100V 230A 2.6mΩ@10V,50A 300W 3V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS HYG028N10NS1B HUAYI TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG028N10NS1B
- Brand
- HUAYI
- Qty
- 580000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 230A 2.6mΩ@10V,50A 300W 3V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 230A
- Drain Source On Resistance (RDS(on)@Vgs: 2.6mΩ@10V
- Power Dissipation (Pd): 300W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 242pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 10.32nF@25V
- Total Gate Charge (Qg@Vgs): 176nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)