Semiconductors
HYG110P04LQ2C2 HUAYI Inventory and RFQ Quote
40V 55A 62.5W 9mΩ@10V,20A 1.6V@250uA 1PCSPChannel PDFN-8(5.9x5.2) MOSFETs ROHS HYG110P04LQ2C2 HUAYI DFN5x6 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG110P04LQ2C2
- Brand
- HUAYI
- Qty
- 581000
- Package
- DFN5x6
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 55A 62.5W 9mΩ@10V,20A 1.6V@250uA 1PCSPChannel PDFN-8(5.9x5.2) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 55A
- Power Dissipation (Pd): 62.5W
- Drain Source On Resistance (RDS(on)@Vgs: 9mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 140pF@25V
- Type: 1 P
- Input Capacitance (Ciss@Vds): 4.468nF@25V
- Total Gate Charge (Qg@Vgs): 76nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)