Semiconductors
HYG035N04LR1D HUAYI Inventory and RFQ Quote
40V 93A 3mΩ@10V,40A 61W 1.6V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS HYG035N04LR1D HUAYI TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG035N04LR1D
- Brand
- HUAYI
- Qty
- 582000
- Package
- TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 93A 3mΩ@10V,40A 61W 1.6V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 93A
- Drain Source On Resistance (RDS(on)@Vgs: 3mΩ@10V
- Power Dissipation (Pd): 61W
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 207pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 5.905nF@25V
- Total Gate Charge (Qg@Vgs): 52.4nC@4.5V
- Operating Temperature: -55℃~+175℃@(Tj)