Semiconductors
HYG023N03LR1D HUAYI Inventory and RFQ Quote
30V 110A 2.1mΩ@10V,20A 62.5W 1.7V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS HYG023N03LR1D HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG023N03LR1D
- Brand
- HUAYI
- Qty
- 583000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
30V 110A 2.1mΩ@10V,20A 62.5W 1.7V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 110A
- Drain Source On Resistance (RDS(on)@Vgs: 2.1mΩ@10V
- Power Dissipation (Pd): 62.5W
- Gate Threshold Voltage (Vgs(th)@Id): 1.7V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 462pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 4.71nF@25V
- Total Gate Charge (Qg@Vgs): 93nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)