Semiconductors
HYG011N04LS1C2 HUAYI Inventory and RFQ Quote
40V 165A 1.1mΩ@10V,40A 75W 1.8V@250uA 1PCSNChannel DFN-8(5.2x5.9) MOSFETs ROHS HYG011N04LS1C2 HUAYI DFN5X6-8 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG011N04LS1C2
- Brand
- HUAYI
- Qty
- 584000
- Package
- DFN5X6-8
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 165A 1.1mΩ@10V,40A 75W 1.8V@250uA 1PCSNChannel DFN-8(5.2x5.9) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 165A
- Drain Source On Resistance (RDS(on)@Vgs: 1.1mΩ@10V
- Power Dissipation (Pd): 75W
- Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 58pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 5.876nF@25V
- Total Gate Charge (Qg@Vgs): 41nC@4.5V
- Operating Temperature: -55℃~+175℃@(Tj)