Semiconductors
HY10P10D HUAYI Inventory and RFQ Quote
100V 10A 225mΩ@10V,10A 31.3W 3V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS HY10P10D HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HY10P10D
- Brand
- HUAYI
- Qty
- 585000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 10A 225mΩ@10V,10A 31.3W 3V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 10A
- Drain Source On Resistance (RDS(on)@Vgs: 225mΩ@10V
- Power Dissipation (Pd): 31.3W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1 P