Semiconductors
HY3906P HUAYI Inventory and RFQ Quote
60V 190A 220W 4mΩ@10V,95A 4V@250uA 1PCSNChannel TO-220FB MOSFETs ROHS HY3906P HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HY3906P
- Brand
- HUAYI
- Qty
- 586000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 190A 220W 4mΩ@10V,95A 4V@250uA 1PCSNChannel TO-220FB MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 190A
- Power Dissipation (Pd): 220W
- Drain Source On Resistance (RDS(on)@Vgs: 4mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N